Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

Satoshi Iba; Ryogo Okamoto; Koki Obu; Yuma Obata; Yuzo Ohno

doi:10.3390/mi12091112

Impacts of Crystal Quality on Carrier Recombination and Spin Dynamics in (110)-Oriented GaAs/AlGaAs Multiple Quantum Wells at Room Temperature

Micromachines (Basel). 2021 Sep 16;12(9):1112. doi: 10.3390/mi12091112.

Authors

Satoshi Iba¹, Ryogo Okamoto², Koki Obu², Yuma Obata², Yuzo Ohno^{1

2}

Affiliations

¹ Research Center for Emerging Computing Technologies, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan.
² Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.

Abstract

We have systematically investigated the structural properties, carrier lifetimes, namely, photoluminescence (PL) lifetimes (τ_PL), and electron spin relaxation times (τ_s) in (110) GaAs/AlGaAs multiple quantum wells (MQWs) by using time-resolved PL measurements. The MQWs were grown by molecular beam epitaxy within a wide range of the growth temperature T_g (430-600 °C) and a high V/III flux ratio using As₂. At 530 °C < T_g < 580 °C, we found that the quality of the heterointerfaces is significantly improved, resulting in τ_PL~40 ns at RT, one order of magnitude longer than those reported so far. Long τ_s (~6 ns) is also observed at RT.

Keywords: GaAs (110); molecular beam epitaxy; photoluminescence; spin relaxation.

Abstract

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