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Selective area formation of GaN nanowires on GaN substrates by the use of amorphous Al x O y nucleation layer.
Nanotechnology. 2020 May 1;31(18):184001. doi: 10.1088/1361-6528/ab6bf2. Epub 2020 Jan 15.
Nanotechnology. 2020.
PMID: 31940593
High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate.
Stanchu H, Kladko V, Kuchuk AV, Safriuk N, Belyaev A, Wierzbicka A, Sobanska M, Klosek K, Zytkiewicz ZR.
Stanchu H, et al. Among authors: klosek k.
Nanoscale Res Lett. 2015 Feb 6;10:51. doi: 10.1186/s11671-015-0766-x. eCollection 2015.
Nanoscale Res Lett. 2015.
PMID: 25852348
Free PMC article.
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