Skip to main page content
U.S. flag

An official website of the United States government

Dot gov

The .gov means it’s official.
Federal government websites often end in .gov or .mil. Before sharing sensitive information, make sure you’re on a federal government site.

Https

The site is secure.
The https:// ensures that you are connecting to the official website and that any information you provide is encrypted and transmitted securely.

Access keys NCBI Homepage MyNCBI Homepage Main Content Main Navigation

Search Page

Filters

My NCBI Filters

Results by year

Table representation of search results timeline featuring number of search results per year.

Year Number of Results
2019 1
2020 2
2021 4
2022 1
2023 5
2024 1

Text availability

Article attribute

Article type

Publication date

Search Results

13 results

Results by year

Filters applied: . Clear all
Page 1
Hybrid 2D-CMOS microchips for memristive applications.
Zhu K, Pazos S, Aguirre F, Shen Y, Yuan Y, Zheng W, Alharbi O, Villena MA, Fang B, Li X, Milozzi A, Farronato M, Muñoz-Rojo M, Wang T, Li R, Fariborzi H, Roldan JB, Benstetter G, Zhang X, Alshareef HN, Grasser T, Wu H, Ielmini D, Lanza M. Zhu K, et al. Nature. 2023 Jun;618(7963):57-62. doi: 10.1038/s41586-023-05973-1. Epub 2023 Mar 27. Nature. 2023. PMID: 36972685 Free PMC article.
Inkjet-printed h-BN memristors for hardware security.
Zhu K, Vescio G, González-Torres S, López-Vidrier J, Frieiro JL, Pazos S, Jing X, Gao X, Wang SD, Ascorbe-Muruzábal J, Ruiz-Fuentes JA, Cirera A, Garrido B, Lanza M. Zhu K, et al. Nanoscale. 2023 Jun 15;15(23):9985-9992. doi: 10.1039/d3nr00030c. Nanoscale. 2023. PMID: 37232241
Advanced Data Encryption ​using 2D Materials.
Wen C, Li X, Zanotti T, Puglisi FM, Shi Y, Saiz F, Antidormi A, Roche S, Zheng W, Liang X, Hu J, Duhm S, Roldan JB, Wu T, Chen V, Pop E, Garrido B, Zhu K, Hui F, Lanza M. Wen C, et al. Among authors: zhu k. Adv Mater. 2021 Jul;33(27):e2100185. doi: 10.1002/adma.202100185. Epub 2021 May 27. Adv Mater. 2021. PMID: 34046938
Standards for the Characterization of Endurance in Resistive Switching Devices.
Lanza M, Waser R, Ielmini D, Yang JJ, Goux L, Suñe J, Kenyon AJ, Mehonic A, Spiga S, Rana V, Wiefels S, Menzel S, Valov I, Villena MA, Miranda E, Jing X, Campabadal F, Gonzalez MB, Aguirre F, Palumbo F, Zhu K, Roldan JB, Puglisi FM, Larcher L, Hou TH, Prodromakis T, Yang Y, Huang P, Wan T, Chai Y, Pey KL, Raghavan N, Dueñas S, Wang T, Xia Q, Pazos S. Lanza M, et al. Among authors: zhu k. ACS Nano. 2021 Nov 23;15(11):17214-17231. doi: 10.1021/acsnano.1c06980. Epub 2021 Nov 3. ACS Nano. 2021. PMID: 34730935 Free article. Review.
Electroforming in Metal-Oxide Memristive Synapses.
Wang T, Shi Y, Puglisi FM, Chen S, Zhu K, Zuo Y, Li X, Jing X, Han T, Guo B, Bukvišová K, Kachtík L, Kolíbal M, Wen C, Lanza M. Wang T, et al. Among authors: zhu k. ACS Appl Mater Interfaces. 2020 Mar 11;12(10):11806-11814. doi: 10.1021/acsami.9b19362. Epub 2020 Feb 25. ACS Appl Mater Interfaces. 2020. PMID: 32036650
Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO2 Resistive Random Access Memories to Address Device Variability.
Swoboda T, Gao X, Rosário CMM, Hui F, Zhu K, Yuan Y, Deshmukh S, Köroǧlu Ç, Pop E, Lanza M, Hilgenkamp H, Rojo MM. Swoboda T, et al. Among authors: zhu k. ACS Appl Electron Mater. 2023 Sep 5;5(9):5025-5031. doi: 10.1021/acsaelm.3c00782. eCollection 2023 Sep 26. ACS Appl Electron Mater. 2023. PMID: 37779889 Free PMC article.
13 results