X-ray-Induced Scintillation Properties of Nd-Doped Bi4Si3O12 Crystals in Visible and Near-Infrared Regions

Kensei Ichiba; Kai Okazaki; Yuma Takebuchi; Takumi Kato; Daisuke Nakauchi; Noriaki Kawaguchi; Takayuki Yanagida

doi:10.3390/ma15248784

X-ray-Induced Scintillation Properties of Nd-Doped Bi₄Si₃O₁₂ Crystals in Visible and Near-Infrared Regions

Materials (Basel). 2022 Dec 8;15(24):8784. doi: 10.3390/ma15248784.

Authors

Kensei Ichiba¹, Kai Okazaki¹, Yuma Takebuchi¹, Takumi Kato¹, Daisuke Nakauchi¹, Noriaki Kawaguchi¹, Takayuki Yanagida¹

Affiliation

¹ Division of Materials Science, Nara Institute of Science and Technology (NAIST), Nara 630-0192, Japan.

Abstract

Undoped, 0.5, 1.0, and 2.0% Nd-doped Bi₄Si₃O₁₂ (BSO) crystals were synthesized by the floating zone method. Regarding photoluminescence (PL) properties, all samples had emission peaks due to the 6p-6s transitions of Bi³⁺ ions. In addition, the Nd-doped samples had emission peaks due to the 4f-4f transitions of Nd³⁺ ions as well. The PL quantum yield of the 0.5, 1.0, and 2.0% Nd-doped samples in the near-infrared range were 67.9, 73.0, and 56.6%, respectively. Regarding X-ray-induced scintillation properties, all samples showed emission properties similar to PL. Afterglow levels at 20 ms after X-ray irradiation of the undoped, 0.5, 1.0, and 2.0% Nd-doped samples were 192.3, 205.9, 228.2, and 315.4 ppm, respectively. Dose rate response functions had good linearity from 0.006 to 60 Gy/h for the 1.0% Nd-doped BSO sample and from 0.03 to 60 Gy/h for the other samples.

Keywords: Bi4Si3O12; near-infrared luminescence; radiation detection; scintillator.

Abstract

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