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Page 1
Atomically Thin Amorphous Indium-Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors.
Nanomaterials (Basel). 2023 Sep 16;13(18):2568. doi: 10.3390/nano13182568.
Nanomaterials (Basel). 2023.
PMID: 37764597
Free PMC article.
A Ka-band one-dimensional beam scanning leaky-wave antenna based on liquid crystal.
Hou S, Fang S, Wang Y, Wang M, Wang Y, Tian J, Feng J.
Hou S, et al. Among authors: feng j.
Sci Rep. 2024 Feb 16;14(1):3937. doi: 10.1038/s41598-024-54688-4.
Sci Rep. 2024.
PMID: 38366014
Free PMC article.
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Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc-Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment.
Feng J, Jeon SH, Park J, Lee SH, Jang J, Kang IM, Kim DK, Bae JH.
Feng J, et al.
Nanomaterials (Basel). 2023 May 24;13(11):1722. doi: 10.3390/nano13111722.
Nanomaterials (Basel). 2023.
PMID: 37299625
Free PMC article.
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Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors.
Na JH, Park JH, Park W, Feng J, Eun JS, Lee J, Lee SH, Jang J, Kang IM, Kim DK, Bae JH.
Na JH, et al. Among authors: feng j.
Nanomaterials (Basel). 2024 Mar 4;14(5):466. doi: 10.3390/nano14050466.
Nanomaterials (Basel). 2024.
PMID: 38470795
Free PMC article.
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