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Page 1
Identification of type of threading dislocation causing reverse leakage in GaN p-n junctions after continuous forward current stress.
Sci Rep. 2022 Jan 27;12(1):1458. doi: 10.1038/s41598-022-05416-3.
Sci Rep. 2022.
PMID: 35087156
Free PMC article.
Micro-Raman imaging on 4H-SiC in contact with the electrode at room temperature.
Suda J, Suwa S, Mizuno S, Togo K, Mastuo Y.
Suda J, et al.
Spectrochim Acta A Mol Biomol Spectrosc. 2018 Mar 15;193:393-396. doi: 10.1016/j.saa.2017.12.024. Epub 2017 Dec 6.
Spectrochim Acta A Mol Biomol Spectrosc. 2018.
PMID: 29274602
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Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam.
Uedono A, Sakurai H, Narita T, Sierakowski K, Bockowski M, Suda J, Ishibashi S, Chichibu SF, Kachi T.
Uedono A, et al. Among authors: suda j.
Sci Rep. 2020 Oct 15;10(1):17349. doi: 10.1038/s41598-020-74362-9.
Sci Rep. 2020.
PMID: 33060712
Free PMC article.
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Investigation of mode assignment on YVO4 crystal in high temperature region by polarized Raman spectroscopy and first principles calculations.
Suda J.
Suda J.
Spectrochim Acta A Mol Biomol Spectrosc. 2018 Mar 5;192:333-335. doi: 10.1016/j.saa.2017.11.035. Epub 2017 Nov 16.
Spectrochim Acta A Mol Biomol Spectrosc. 2018.
PMID: 29174668
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