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Page 1
Standards for the Characterization of Endurance in Resistive Switching Devices.
ACS Nano. 2021 Nov 23;15(11):17214-17231. doi: 10.1021/acsnano.1c06980. Epub 2021 Nov 3.
ACS Nano. 2021.
PMID: 34730935
Free article.
Review.
Holistic Variability Analysis in Resistive Switching Memories Using a Two-Dimensional Variability Coefficient.
Acal C, Maldonado D, Aguilera AM, Zhu K, Lanza M, Roldán JB.
Acal C, et al. Among authors: roldan jb.
ACS Appl Mater Interfaces. 2023 Apr 19;15(15):19102-19110. doi: 10.1021/acsami.2c22617. Epub 2023 Apr 7.
ACS Appl Mater Interfaces. 2023.
PMID: 37027783
Free PMC article.
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Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller.
Pazos S, Zheng W, Zanotti T, Aguirre F, Becker T, Shen Y, Zhu K, Yuan Y, Wirth G, Puglisi FM, Roldán JB, Palumbo F, Lanza M.
Pazos S, et al. Among authors: roldan jb.
Nanoscale. 2023 Feb 2;15(5):2171-2180. doi: 10.1039/d2nr06222d.
Nanoscale. 2023.
PMID: 36628646
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TiN/Ti/HfO2/TiN memristive devices for neuromorphic computing: from synaptic plasticity to stochastic resonance.
Maldonado D, Cantudo A, Perez E, Romero-Zaliz R, Perez-Bosch Quesada E, Mahadevaiah MK, Jimenez-Molinos F, Wenger C, Roldan JB.
Maldonado D, et al. Among authors: roldan jb.
Front Neurosci. 2023 Sep 19;17:1271956. doi: 10.3389/fnins.2023.1271956. eCollection 2023.
Front Neurosci. 2023.
PMID: 37795180
Free PMC article.
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