Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

Ki Yeong Kim; Joo Seok Noh; Tae Young Yoon; Jang Hyun Kim

doi:10.3390/mi12111422

Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

Micromachines (Basel). 2021 Nov 19;12(11):1422. doi: 10.3390/mi12111422.

Authors

Ki Yeong Kim¹, Joo Seok Noh¹, Tae Young Yoon¹, Jang Hyun Kim¹

Affiliation

¹ School of Electrical Engineering, Pukyong National University, Busan 48513, Korea.

Abstract

In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (E_off) drops by about 7% when on-state voltage (V_on) and breakdown voltage (BV) are similar. V_on increases by about 0.5% and BV decreases by only about 0.8%.

Keywords: IGBT; breakdown voltage; n-buffer layer; on-state voltage; p-pillar; super junction; turn-off loss.