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jangwoon park
(12 results)?
Decrease in work function of boron ion-implanted ZnO thin films.
J Nanosci Nanotechnol. 2007 Nov;7(11):4021-4. doi: 10.1166/jnn.2007.086.
J Nanosci Nanotechnol. 2007.
PMID: 18047109
Work function increase of Al-doped ZnO thin films by B+ ion implantation.
Hong SJ, Heo GS, Park JW, Lee IH, Choi BH, Lee JH, Park SY, Shin DC.
Hong SJ, et al.
J Nanosci Nanotechnol. 2007 Nov;7(11):4077-80. doi: 10.1166/jnn.2007.090.
J Nanosci Nanotechnol. 2007.
PMID: 18047123
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Decrease in work function of transparent conducting ZnO tin films by phosphorus ion implantation.
Heo GS, Hong SJ, Park JW, Choi BH, Lee JH, Shin DC.
Heo GS, et al.
J Nanosci Nanotechnol. 2008 Sep;8(9):4877-80. doi: 10.1166/jnn.2008.ic61.
J Nanosci Nanotechnol. 2008.
PMID: 19049129
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Photoluminescence dependence of InGaN/GaN QW on embedded AlGaN delta-layer.
Park J, Lee J, Park S.
Park J, et al.
Opt Express. 2007 May 14;15(10):6096-101. doi: 10.1364/oe.15.006096.
Opt Express. 2007.
PMID: 19546914
Free article.
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Time-domain models for the performance simulation of semiconductor optical amplifiers.
Park J, Kawakami Y.
Park J, et al.
Opt Express. 2006 Apr 3;14(7):2956-68. doi: 10.1364/oe.14.002956.
Opt Express. 2006.
PMID: 19516435
Free article.
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