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yonghyun ha
(10 results)?
Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors.
Micromachines (Basel). 2022 Jun 7;13(6):901. doi: 10.3390/mi13060901.
Micromachines (Basel). 2022.
PMID: 35744515
Free PMC article.
Performance Degradation in Static Random Access Memory of 10 nm Node FinFET Owing to Displacement Defects.
Bang M, Ha J, Lee G, Suh M, Kim J.
Bang M, et al. Among authors: ha j.
Micromachines (Basel). 2023 May 22;14(5):1090. doi: 10.3390/mi14051090.
Micromachines (Basel). 2023.
PMID: 37241715
Free PMC article.
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On-State Current Degradation Owing to Displacement Defect by Terrestrial Cosmic Rays in Nanosheet FET.
Ha J, Lee G, Bae H, Kim K, Han JW, Kim J.
Ha J, et al.
Micromachines (Basel). 2022 Aug 8;13(8):1276. doi: 10.3390/mi13081276.
Micromachines (Basel). 2022.
PMID: 36014198
Free PMC article.
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