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jinqiong li
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Ultra-thin gate insulator of atomic-layer-deposited AlOxand HfOxfor amorphous InGaZnO thin-film transistors.
Nanotechnology. 2023 Apr 12;34(26). doi: 10.1088/1361-6528/acc742.
Nanotechnology. 2023.
PMID: 36962937
In situx-ray photoelectron spectroscopy analysis of the atomic layer deposition of Al2O3on SiOx/Si: Interface dipole and persistent surface groups.
Li J, Zhao R, Wang X.
Li J, et al.
Nanotechnology. 2023 Mar 30;34(24). doi: 10.1088/1361-6528/acc408.
Nanotechnology. 2023.
PMID: 36917851
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