Modeling and manufacturing of a micromachined magnetic sensor using the CMOS process without any post-process

Jian-Zhi Tseng; Chyan-Chyi Wu; Ching-Liang Dai

doi:10.3390/s140406722

Modeling and manufacturing of a micromachined magnetic sensor using the CMOS process without any post-process

Sensors (Basel). 2014 Apr 11;14(4):6722-33. doi: 10.3390/s140406722.

Authors

Jian-Zhi Tseng¹, Chyan-Chyi Wu², Ching-Liang Dai³

Affiliations

¹ Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402, Taiwan. a16824795@hotmail.com.
² Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, Tamsui, 251, Taiwan. ccwu@mail.tku.edu.tw.
³ Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402, Taiwan. cldai@dragon.nchu.edu.tw.

Abstract

The modeling and fabrication of a magnetic microsensor based on a magneto-transistor were presented. The magnetic sensor is fabricated by the commercial 0.18 mm complementary metal oxide semiconductor (CMOS) process without any post-process. The finite element method (FEM) software Sentaurus TCAD is utilized to analyze the electrical properties and carriers motion path of the magneto-transistor. A readout circuit is used to amplify the voltage difference of the bases into the output voltage. Experiments show that the sensitivity of the magnetic sensor is 354 mV/T at the supply current of 4 mA.

Publication types

Research Support, Non-U.S. Gov't