The fabrication of advanced architectures in poly(glycidylmethacrylate-co-styrene) (PGMA-S) copolymers using direct laser interference patterning (DLIP) and its selective functionalization is reported. The structure features depend mainly on the laser energy used and on the styrene content in the copolymer. The topography, measured by electronic scanning microscopy, show regular and ordered arrays for the polystyrene (PS) and for the copolymers PGMA-S. The surface PS homopolymer is ablated at the position of maximum light fluence (constructive interference), while in the copolymers the surfaces swell up at the regions with maximal fluence. The styrene units are shown to absorb the laser energy giving photothermally ablated regions or promoting the chemical decomposition of acrylate units or polymer segments. In that way, DLIP provides a unique way to produce regularly ordered structures protruding or depressing from the polymer surface without altering to a large extent the chemical nature of the material. In addition, it is shown, using fluorescence microscopy, that amine-polyethylenglycol-CdSe quantum dots (NH(2)-PEG-QDs) could be spatially localized by reaction with patterned surfaces of PGMA-S. In that way, it is proven that a patterned and chemically reactive surface can be created using DLIP of PGMA-S.