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Explicit Thermal Resistance Model of Self-Heating Effects of AlGaN/GaN HEMTs with Linear and Non-Linear Thermal Conductivity.
Materials (Basel). 2022 Nov 25;15(23):8415. doi: 10.3390/ma15238415.
Materials (Basel). 2022.
PMID: 36499910
Free PMC article.
A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors.
Amir W, Shin JW, Shin KY, Kim JM, Cho CY, Park KH, Hoshi T, Tsutsumi T, Sugiyama H, Matsuzaki H, Kim TW.
Amir W, et al. Among authors: kim jm.
Sci Rep. 2021 Nov 17;11(1):22401. doi: 10.1038/s41598-021-01768-4.
Sci Rep. 2021.
PMID: 34789786
Free PMC article.
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Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors.
Amir W, Shin JW, Shin KY, Kim JM, Cho CY, Park KH, Hoshi T, Tsutsumi T, Sugiyama H, Matsuzaki H, Kim TW.
Amir W, et al. Among authors: kim jm.
Sci Rep. 2021 Dec 2;11(1):23667. doi: 10.1038/s41598-021-02854-3.
Sci Rep. 2021.
PMID: 34857865
Free PMC article.
No abstract available.
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