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Page 1
Highly Robust Neutral Plane Oxide TFTs Withstanding 0.25 mm Bending Radius for Stretchable Electronics.
Sci Rep. 2016 May 11;6:25734. doi: 10.1038/srep25734.
Sci Rep. 2016.
PMID: 27165715
Free PMC article.
Origin of light instability in amorphous IGZO thin-film transistors and its suppression.
Mativenga M, Haque F, Billah MM, Um JG.
Mativenga M, et al. Among authors: um jg.
Sci Rep. 2021 Jul 16;11(1):14618. doi: 10.1038/s41598-021-94078-8.
Sci Rep. 2021.
PMID: 34272454
Free PMC article.
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