Ellipsometric investigation of rough zinc arsenide epilayers

Appl Opt. 2002 Apr 1;41(10):1894-8. doi: 10.1364/ao.41.001894.

Abstract

We report single-wavelength ellipsometric measurements of the complex index of refraction of rough Zn3As2 films on InP substrates. What we believe to be a novel technique, based on surface roughness measurements by atomic-force microscopy, is discussed to extract useful information from the ellipsometry results. The anticipated presence of a thin oxide layer is confirmed by Auger electron spectroscopy.