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Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
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2012 | 1 |
2014 | 1 |
2018 | 1 |
2019 | 1 |
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2023 | 1 |
2024 | 0 |
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Page 1
MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates.
Nanomaterials (Basel). 2022 Feb 25;12(5):785. doi: 10.3390/nano12050785.
Nanomaterials (Basel). 2022.
PMID: 35269273
Free PMC article.
Direct Auger recombination and density-dependent hole diffusion in InN.
Aleksiejūnas R, Podlipskas Ž, Nargelas S, Kadys A, Kolenda M, Nomeika K, Mickevičius J, Tamulaitis G.
Aleksiejūnas R, et al. Among authors: mickevicius j.
Sci Rep. 2018 Mar 15;8(1):4621. doi: 10.1038/s41598-018-22832-6.
Sci Rep. 2018.
PMID: 29545555
Free PMC article.
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Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures.
Jorudas J, Prystawko P, Šimukovič A, Aleksiejūnas R, Mickevičius J, Kryśko M, Michałowski PP, Kašalynas I.
Jorudas J, et al. Among authors: mickevicius j.
Materials (Basel). 2022 Jan 31;15(3):1118. doi: 10.3390/ma15031118.
Materials (Basel). 2022.
PMID: 35161062
Free PMC article.
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Epitaxial Lateral Overgrowth of GaN on a Laser-Patterned Graphene Mask.
Kadys A, Mickevičius J, Badokas K, Strumskis S, Vanagas E, Podlipskas Ž, Ignatjev I, Malinauskas T.
Kadys A, et al. Among authors: mickevicius j.
Nanomaterials (Basel). 2023 Feb 20;13(4):784. doi: 10.3390/nano13040784.
Nanomaterials (Basel). 2023.
PMID: 36839152
Free PMC article.
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Influence of carrier localization on high-carrier-density effects in AlGaN quantum wells.
Mickevičius J, Jurkevičius J, Tamulaitis G, Shur MS, Shatalov M, Yang J, Gaska R.
Mickevičius J, et al.
Opt Express. 2014 Mar 10;22 Suppl 2:A491-7. doi: 10.1364/OE.22.00A491.
Opt Express. 2014.
PMID: 24922258
Free article.
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Enhancement of InN Luminescence by Introduction of Graphene Interlayer.
Dobrovolskas D, Arakawa S, Mouri S, Araki T, Nanishi Y, Mickevičius J, Tamulaitis G.
Dobrovolskas D, et al. Among authors: mickevicius j.
Nanomaterials (Basel). 2019 Mar 12;9(3):417. doi: 10.3390/nano9030417.
Nanomaterials (Basel). 2019.
PMID: 30871011
Free PMC article.
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Photoluminescence efficiency droop and stimulated recombination in GaN epilayers.
Mickevičius J, Jurkevičius J, Shur MS, Yang J, Gaska R, Tamulaitis G.
Mickevičius J, et al.
Opt Express. 2012 Nov 5;20(23):25195-200. doi: 10.1364/OE.20.025195.
Opt Express. 2012.
PMID: 23187336
Free article.
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