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Light-Emitting Diodes Based on InGaN/GaN Nanowires on Microsphere-Lithography-Patterned Si Substrates.
Nanomaterials (Basel). 2022 Jun 10;12(12):1993. doi: 10.3390/nano12121993.
Nanomaterials (Basel). 2022.
PMID: 35745332
Free PMC article.
Submicron-Size Emitters of the 1.2-1.55 μm Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate.
Melnichenko I, Moiseev E, Kryzhanovskaya N, Makhov I, Nadtochiy A, Kalyuznyy N, Kondratev V, Zhukov A.
Melnichenko I, et al.
Nanomaterials (Basel). 2022 Nov 27;12(23):4213. doi: 10.3390/nano12234213.
Nanomaterials (Basel). 2022.
PMID: 36500837
Free PMC article.
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