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Page 1
Effect of the Active Channel Thickness Variation in Amorphous In-Zn-Sn-O Thin Film Transistor.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1686-1689. doi: 10.1166/jnn.2019.16251.
J Nanosci Nanotechnol. 2019.
PMID: 30469246
High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide.
Noviyana I, Lestari AD, Putri M, Won MS, Bae JS, Heo YW, Lee HY.
Noviyana I, et al.
Materials (Basel). 2017 Jun 26;10(7):702. doi: 10.3390/ma10070702.
Materials (Basel). 2017.
PMID: 28773058
Free PMC article.
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Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
Jauhari IM, Bak YG, Noviyana I, Putri MA, Lee JA, Heo YW, Lee HY.
Jauhari IM, et al. Among authors: noviyana i.
J Nanosci Nanotechnol. 2021 Mar 1;21(3):1748-1753. doi: 10.1166/jnn.2021.18924.
J Nanosci Nanotechnol. 2021.
PMID: 33404442
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DC Magnetron Sputtered IZTO Thin Films for Organic Photovoltaic Application.
Lee HJ, Noviyana I, Putri M, Koo CY, Lee JA, Kim JJ, Jeong Y, Lee Y, Lee HY.
Lee HJ, et al. Among authors: noviyana i.
J Nanosci Nanotechnol. 2018 Feb 1;18(2):1270-1273. doi: 10.1166/jnn.2018.14927.
J Nanosci Nanotechnol. 2018.
PMID: 29448572
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