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Page 1
Superior and stable ferroelectric properties of hafnium-zirconium-oxide thin films deposited via atomic layer deposition using cyclopentadienyl-based precursors without annealing.
Nanoscale. 2021 May 13;13(18):8524-8530. doi: 10.1039/d1nr01535d.
Nanoscale. 2021.
PMID: 33908540
Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf1-xZrxO2 Thin Films via Atomic Layer Deposition.
Oh Y, Lee SW, Choi JH, Ahn SE, Kim HB, Ahn JH.
Oh Y, et al. Among authors: kim hb.
Nanomaterials (Basel). 2023 Jul 27;13(15):2187. doi: 10.3390/nano13152187.
Nanomaterials (Basel). 2023.
PMID: 37570505
Free PMC article.
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Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System Applications.
Byun J, Kho W, Hwang H, Kang Y, Kang M, Noh T, Kim H, Lee J, Kim HB, Ahn JH, Ahn SE.
Byun J, et al. Among authors: kim hb.
Nanomaterials (Basel). 2023 Oct 5;13(19):2704. doi: 10.3390/nano13192704.
Nanomaterials (Basel). 2023.
PMID: 37836345
Free PMC article.
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