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Year | Number of Results |
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2019 | 2 |
2020 | 2 |
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Page 1
Noise Improvement of a-Si Microbolometers by the Post-Metal Annealing Process.
Sensors (Basel). 2021 Oct 10;21(20):6722. doi: 10.3390/s21206722.
Sensors (Basel). 2021.
PMID: 34695935
Free PMC article.
Gate Voltage Dependence of Low Frequency Noise in Tunneling Field Effect Transistors.
Kim SY, Song HS, Kwon SK, Lim DH, Choi CH, Lee GW, Lee HD.
Kim SY, et al. Among authors: song hs.
J Nanosci Nanotechnol. 2019 Oct 1;19(10):6083-6086. doi: 10.1166/jnn.2019.16989.
J Nanosci Nanotechnol. 2019.
PMID: 31026912
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Investigation of Positive Bias Temperature Instability Characteristics of Fully Depleted Silicon on Insulator Tunneling Field Effect Transistor with High-k Dielectric Gate Stacks.
Song HS, Kim SY, Lim DH, Kwon SK, Choi CH, Lee GW, Lee HD.
Song HS, et al.
J Nanosci Nanotechnol. 2019 Oct 1;19(10):6131-6134. doi: 10.1166/jnn.2019.16992.
J Nanosci Nanotechnol. 2019.
PMID: 31026922
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Temperature Dependence of Low Frequency Noise in Silicon on Insulator Tunneling Field Effect Transistor.
Song HD, Song HS, Eadi SB, Choi HW, Lee GW, Lee HD.
Song HD, et al. Among authors: song hs.
J Nanosci Nanotechnol. 2020 Aug 1;20(8):4699-4703. doi: 10.1166/jnn.2020.17796.
J Nanosci Nanotechnol. 2020.
PMID: 32126643
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Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs.
Eadi SB, Lee JC, Song HS, Oh J, Lee GW, Lee HD.
Eadi SB, et al. Among authors: song hs.
Sci Rep. 2020 Mar 4;10(1):4054. doi: 10.1038/s41598-020-61011-4.
Sci Rep. 2020.
PMID: 32132595
Free PMC article.
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