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Two-dimensional Janus MGeSiP4 (M = Ti, Zr, and Hf) with an indirect band gap and high carrier mobilities: first-principles calculations.
Hiep NT, Anh NPQ, Phuc HV, Nguyen CQ, Hieu NN, Vi VTT. Hiep NT, et al. Phys Chem Chem Phys. 2023 Mar 22;25(12):8779-8788. doi: 10.1039/d3cp00188a. Phys Chem Chem Phys. 2023. PMID: 36912122
Notably, the MGeSiP(4) monolayers show directionally anisotropic carrier mobility with a high electron mobility of up to 2.72 10(3) cm(2) V(-1) s(-1) for the ZrGeSiP(4) monolayer, indicating advantages for applications in electronic devices. ...
Notably, the MGeSiP(4) monolayers show directionally anisotropic carrier mobility with a high electron mobility of up to 2.72 10(3) cm(2) …
Outstanding elastic, electronic, transport and optical properties of a novel layered material C4F2: first-principles study.
Vu TV, Phuc HV, Ahmad S, Nha VQ, Van Lanh C, Rai DP, Kartamyshev AI, Pham KD, Nhan LC, Hieu NN. Vu TV, et al. RSC Adv. 2021 Jul 1;11(38):23280-23287. doi: 10.1039/d1ra04065k. eCollection 2021 Jul 1. RSC Adv. 2021. PMID: 35479814 Free PMC article.
Motivated by very recent successful experimental transformation of AB-stacking bilayer graphene into fluorinated single-layer diamond (namely fluorinated diamane C(4)F(2)) [P. V. Bakharev, M. Huang, M. Saxena, S. W. Lee, S. H. Joo, S. O. Park, J. ...Interestingly, C(4)F(2) …
Motivated by very recent successful experimental transformation of AB-stacking bilayer graphene into fluorinated single-layer diamond (namel …
Rashba-type spin splitting and transport properties of novel Janus XWGeN2 (X = O, S, Se, Te) monolayers.
Vu TV, Phuc HV, Nguyen CV, Vi VTT, Kartamyshev AI, Hieu NN. Vu TV, et al. Phys Chem Chem Phys. 2022 Jul 13;24(27):16512-16521. doi: 10.1039/d2cp02015g. Phys Chem Chem Phys. 2022. PMID: 35781308
It is found that the electron mobilities of OWGeN(2) and SWGeN(2) monolayers exceed 200 cm(2) V(-1) s(-1), which are suitable for applications in nanoelectronic devices....
It is found that the electron mobilities of OWGeN(2) and SWGeN(2) monolayers exceed 200 cm(2) V(-1) s(-1), which are suitable for app …
Computational insights into structural, electronic and optical characteristics of GeC/C2N van der Waals heterostructures: effects of strain engineering and electric field.
Nguyen HTT, Vu TV, Pham VT, Hieu NN, Phuc HV, Hoi BD, Binh NTT, Idrees M, Amin B, Nguyen CV. Nguyen HTT, et al. RSC Adv. 2020 Jan 16;10(5):2967-2974. doi: 10.1039/c9ra08749d. eCollection 2020 Jan 14. RSC Adv. 2020. PMID: 35496107 Free PMC article.
The semiconductor to metal transition can be achieved in GeC/C(2)N HTS in the case when the positive electric field of +0.3 V A(-1) or the tensile vertical strain of -0.9 A is applied. These findings demonstrate that GeC/C(2)N HTS can be used to design future high-performa …
The semiconductor to metal transition can be achieved in GeC/C(2)N HTS in the case when the positive electric field of +0.3 V A(-1) o …