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2014 3
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2019 1
2021 1
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Page 1
Si Doping of Vapor-Liquid-Solid GaAs Nanowires: n-Type or p-Type?
Hijazi H, Monier G, Gil E, Trassoudaine A, Bougerol C, Leroux C, Castellucci D, Robert-Goumet C, Hoggan PE, André Y, Isik Goktas N, LaPierre RR, Dubrovskii VG. Hijazi H, et al. Among authors: monier g. Nano Lett. 2019 Jul 10;19(7):4498-4504. doi: 10.1021/acs.nanolett.9b01308. Epub 2019 Jun 20. Nano Lett. 2019. PMID: 31203632
Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.
Dong Z, André Y, Dubrovskii VG, Bougerol C, Leroux C, Ramdani MR, Monier G, Trassoudaine A, Castelluci D, Gil E. Dong Z, et al. Among authors: monier g. Nanotechnology. 2017 Mar 24;28(12):125602. doi: 10.1088/1361-6528/aa5c6b. Epub 2017 Jan 31. Nanotechnology. 2017. PMID: 28140362
Record pure zincblende phase in GaAs nanowires down to 5 nm in radius.
Gil E, Dubrovskii VG, Avit G, André Y, Leroux C, Lekhal K, Grecenkov J, Trassoudaine A, Castelluci D, Monier G, Ramdani RM, Robert-Goumet C, Bideux L, Harmand JC, Glas F. Gil E, et al. Among authors: monier g. Nano Lett. 2014 Jul 9;14(7):3938-44. doi: 10.1021/nl501239h. Epub 2014 Jun 3. Nano Lett. 2014. PMID: 24873917
Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: ab initio simulations supporting center nucleation.
André Y, Lekhal K, Hoggan P, Avit G, Cadiz F, Rowe A, Paget D, Petit E, Leroux C, Trassoudaine A, Ramdani MR, Monier G, Colas D, Ajib R, Castelluci D, Gil E. André Y, et al. Among authors: monier g. J Chem Phys. 2014 May 21;140(19):194706. doi: 10.1063/1.4874875. J Chem Phys. 2014. PMID: 24852556
Ultralong and defect-free GaN nanowires grown by the HVPE process.
Avit G, Lekhal K, André Y, Bougerol C, Réveret F, Leymarie J, Gil E, Monier G, Castelluci D, Trassoudaine A. Avit G, et al. Among authors: monier g. Nano Lett. 2014 Feb 12;14(2):559-62. doi: 10.1021/nl403687h. Epub 2014 Jan 10. Nano Lett. 2014. PMID: 24393103