Synthesis of Copper Nitride Layers by the Pulsed Magnetron Sputtering Method Carried out under Various Operating Conditions

Copper nitride shows various properties that depend on the structure of the material and is influenced by the change in technical parameters. In the present work, Cu-N layers were synthesized using the pulsed magnetron sputtering method. The synthesis was performed under different operating conditions: direct current (DC) or alternating current (AC) power supply, and various atmospheres: pure Ar and a mixture of Ar + N₂. The structural properties of the deposited layers were characterized by X-ray diffraction measurements, and Raman spectroscopy and scanning electron microscopy have been performed. Optical properties were also evaluated. The obtained layers showed tightly packed columnar grain features. The kinetics of the layer growth in the AC mode was lower than that observed in the DC mode, and the layers were thinner and more fine-grained. The copper nitride layers were characterized by the one-phase and two-phase polycrystalline structure of the Cu₃N phase with the preferred growth orientation (100). The lattice constant oscillates between 3.808 and 3.815 Å for one-phase and has a value of 3.828 Å for a two-phase structure. Phase composition results were correlated with Raman spectroscopy measurements. Raman spectra exhibited a broad, diffused, and intense signal of Cu₃N phase, with Raman shift located at 628-635 cm^-1. Studies on optical properties showed that the energy gap ranged from 2.17 to 2.47 eV. The results showed that controlling technical parameters gives a possibility to optimize the structure and phase composition of deposited layers. The reported changes were discussed and attributed to the properties of the material layers and technology method.