Electronic structure and charge transport mechanism in a forming-free SiO x -based memristor

Andrei A Gismatulin; Vitalii A Voronkovskii; Gennadiy N Kamaev; Yuriy N Novikov; Vladimir N Kruchinin; Grigory K Krivyakin; Vladimir A Gritsenko; Igor P Prosvirin; Albert Chin

doi:10.1088/1361-6528/abb505

Electronic structure and charge transport mechanism in a forming-free SiO _x -based memristor

Nanotechnology. 2020 Dec 11;31(50):505704. doi: 10.1088/1361-6528/abb505.

Affiliations

¹ Rzhanov Institute of Semiconductor Physics SB RAS, 13 Lavrentiev Ave., 630090, Novosibirsk, Russia.
² Novosibirsk State University, 2 Pirogov Str., 630090, Novosibirsk, Russia.
³ Novosibirsk State Technical University, 20 Marx Ave., Novosibirsk 630073, Russia.
⁴ Boreskov Institute of Catalysis SB RAS, 5 Lavrentiev ave., 630090, Novosibirsk, Russia.
⁵ National Chiao Tung University Hsinchu, 300, Taiwan.

PMID: 33021224
DOI: 10.1088/1361-6528/abb505

Abstract

THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiO _x , which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiO _x -based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiO _x -based memristor in different states, are determined.