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Page 1
Effect of Inhomogeneous Broadening in Ultraviolet III-Nitride Light-Emitting Diodes.
Materials (Basel). 2021 Dec 20;14(24):7890. doi: 10.3390/ma14247890.
Materials (Basel). 2021.
PMID: 34947484
Free PMC article.
Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts.
Jeddi H, Adham K, Zhao Y, Witzigmann B, Römer F, Bermeo M, Borgström MT, Pettersson H.
Jeddi H, et al. Among authors: romer f.
Nanotechnology. 2024 Mar 8;35(21). doi: 10.1088/1361-6528/ad2bd0.
Nanotechnology. 2024.
PMID: 38382119
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Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas.
Schlykow V, Manganelli CL, Römer F, Clausen C, Augel L, Schulze J, Katzer J, Schubert MA, Witzigmann B, Schroeder T, Capellini G, Fischer IA.
Schlykow V, et al. Among authors: romer f.
Nanotechnology. 2020 Aug 21;31(34):345203. doi: 10.1088/1361-6528/ab91ef. Epub 2020 May 11.
Nanotechnology. 2020.
PMID: 32392549
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Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics.
Fatahilah MF, Yu F, Strempel K, Römer F, Maradan D, Meneghini M, Bakin A, Hohls F, Schumacher HW, Witzigmann B, Waag A, Wasisto HS.
Fatahilah MF, et al. Among authors: romer f.
Sci Rep. 2019 Jul 16;9(1):10301. doi: 10.1038/s41598-019-46186-9.
Sci Rep. 2019.
PMID: 31311946
Free PMC article.
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GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors.
Yu F, Yao S, Römer F, Witzigmann B, Schimpke T, Strassburg M, Bakin A, Schumacher HW, Peiner E, Wasisto HS, Waag A.
Yu F, et al. Among authors: romer f.
Nanotechnology. 2017 Mar 3;28(9):095206. doi: 10.1088/1361-6528/aa57b6. Epub 2017 Jan 9.
Nanotechnology. 2017.
PMID: 28067211
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Effect of Auger recombination and leakage on the droop in InGaN/GaN quantum well LEDs.
Römer F, Witzigmann B.
Römer F, et al.
Opt Express. 2014 Oct 20;22 Suppl 6:A1440-52. doi: 10.1364/OE.22.0A1440.
Opt Express. 2014.
PMID: 25607301
Free article.
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