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Page 1
Relation between Ga Vacancies, Photoluminescence, and Growth Conditions of MOVPE-Prepared GaN Layers.
Materials (Basel). 2022 Oct 5;15(19):6916. doi: 10.3390/ma15196916.
Materials (Basel). 2022.
PMID: 36234257
Free PMC article.
High-κ Wide-Gap Layered Dielectric for Two-Dimensional van der Waals Heterostructures.
Söll A, Lopriore E, Ottesen A, Luxa J, Pasquale G, Sturala J, Hájek F, Jarý V, Sedmidubský D, Mosina K, Sokolović I, Rasouli S, Grasser T, Diebold U, Kis A, Sofer Z.
Söll A, et al. Among authors: hajek f.
ACS Nano. 2024 Apr 16;18(15):10397-10406. doi: 10.1021/acsnano.3c10411. Epub 2024 Apr 1.
ACS Nano. 2024.
PMID: 38557003
Free PMC article.
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Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface.
Hospodková A, Hájek F, Hubáček T, Gedeonová Z, Hubík P, Hývl M, Pangrác J, Dominec F, Košutová T.
Hospodková A, et al. Among authors: hajek f.
ACS Appl Mater Interfaces. 2023 Apr 19;15(15):19646-19652. doi: 10.1021/acsami.3c00799. Epub 2023 Apr 6.
ACS Appl Mater Interfaces. 2023.
PMID: 37022802
Free PMC article.
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Scintillation Response Enhancement in Nanocrystalline Lead Halide Perovskite Thin Films on Scintillating Wafers.
Děcká K, Král J, Hájek F, Průša P, Babin V, Mihóková E, Čuba V.
Děcká K, et al. Among authors: hajek f.
Nanomaterials (Basel). 2021 Dec 21;12(1):14. doi: 10.3390/nano12010014.
Nanomaterials (Basel). 2021.
PMID: 35009964
Free PMC article.
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