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An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.
Materials (Basel). 2019 May 15;12(10):1599. doi: 10.3390/ma12101599.
Materials (Basel). 2019.
PMID: 31096689
Free PMC article.
Review.
Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis.
Fiorenza P, Iucolano F, Nicotra G, Bongiorno C, Deretzis I, La Magna A, Giannazzo F, Saggio M, Spinella C, Roccaforte F.
Fiorenza P, et al. Among authors: iucolano f.
Nanotechnology. 2018 Sep 28;29(39):395702. doi: 10.1088/1361-6528/aad129. Epub 2018 Jul 4.
Nanotechnology. 2018.
PMID: 29972377
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Conduction Mechanisms at Interface of AlN/SiN Dielectric Stacks with AlGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties.
Greco G, Fiorenza P, Iucolano F, Severino A, Giannazzo F, Roccaforte F.
Greco G, et al. Among authors: iucolano f.
ACS Appl Mater Interfaces. 2017 Oct 11;9(40):35383-35390. doi: 10.1021/acsami.7b08935. Epub 2017 Sep 26.
ACS Appl Mater Interfaces. 2017.
PMID: 28920438
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