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eungyo park
(1 results)?
Indium-Gallium-Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine.
Nano Lett. 2023 Oct 25;23(20):9626-9633. doi: 10.1021/acs.nanolett.3c03510. Epub 2023 Oct 11.
Nano Lett. 2023.
PMID: 37819875
Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition.
Das T, Yang E, Seo JE, Kim JH, Park E, Kim M, Seo D, Kwak JY, Chang J.
Das T, et al. Among authors: park e.
ACS Appl Mater Interfaces. 2021 Jan 13;13(1):1861-1871. doi: 10.1021/acsami.0c17810. Epub 2021 Jan 3.
ACS Appl Mater Interfaces. 2021.
PMID: 33393295
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Gas-Phase Alkali Metal-Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large-Scale Precise Nucleation Control.
Kim TS, Dhakal KP, Park E, Noh G, Chai HJ, Kim Y, Oh S, Kang M, Park J, Kim J, Kim S, Jeong HY, Bang S, Kwak JY, Kim J, Kang K.
Kim TS, et al. Among authors: park e.
Small. 2022 May;18(20):e2106368. doi: 10.1002/smll.202106368. Epub 2022 Apr 21.
Small. 2022.
PMID: 35451163
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Large Memory Window of van der Waals Heterostructure Devices Based on MOCVD-Grown 2D Layered Ge4 Se9.
Noh G, Song H, Choi H, Kim M, Jeong JH, Lee Y, Choi MY, Oh S, Jo MK, Woo DY, Jo Y, Park E, Moon E, Kim TS, Chai HJ, Huh W, Lee CH, Kim CJ, Yang H, Song S, Jeong HY, Kim YS, Lee GH, Lim J, Kim CG, Chung TM, Kwak JY, Kang K.
Noh G, et al. Among authors: park e.
Adv Mater. 2022 Oct;34(41):e2204982. doi: 10.1002/adma.202204982. Epub 2022 Sep 9.
Adv Mater. 2022.
PMID: 36000232
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Polarity Control and Weak Fermi-Level Pinning in PdSe2 Transistors.
Seo JE, Das T, Park E, Seo D, Kwak JY, Chang J.
Seo JE, et al. Among authors: park e.
ACS Appl Mater Interfaces. 2021 Sep 15;13(36):43480-43488. doi: 10.1021/acsami.1c08028. Epub 2021 Aug 30.
ACS Appl Mater Interfaces. 2021.
PMID: 34460224
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A 2D material-based floating gate device with linear synaptic weight update.
Park E , Kim M , Kim TS , Kim IS , Park J , Kim J , Jeong Y , Lee S , Kim I , Park JK , Kim GT , Chang J , Kang K , Kwak JY .
Park E , et al.
Nanoscale. 2020 Dec 23;12(48):24503-24509. doi: 10.1039/d0nr07403a.
Nanoscale. 2020.
PMID: 33320140
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Low-Temperature and High-Quality Growth of Bi2O2Se Layered Semiconductors via Cracking Metal-Organic Chemical Vapor Deposition.
Kang M, Chai HJ, Jeong HB, Park C, Jung IY, Park E, Çiçek MM, Lee I, Bae BS, Durgun E, Kwak JY, Song S, Choi SY, Jeong HY, Kang K.
Kang M, et al. Among authors: park e.
ACS Nano. 2021 May 25;15(5):8715-8723. doi: 10.1021/acsnano.1c00811. Epub 2021 May 11.
ACS Nano. 2021.
PMID: 33973765
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