NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers

Donghyuk Yeom; Kihyun Keem; Jeongmin Kang; Dong-Young Jeong; Changjoon Yoon; Dongseung Kim; Sangsig Kim

doi:10.1088/0957-4484/19/26/265202

NOT and NAND logic circuits composed of top-gate ZnO nanowire field-effect transistors with high-k Al(2)O(3) gate layers

Nanotechnology. 2008 Jul 2;19(26):265202. doi: 10.1088/0957-4484/19/26/265202. Epub 2008 May 19.

Authors

Donghyuk Yeom¹, Kihyun Keem, Jeongmin Kang, Dong-Young Jeong, Changjoon Yoon, Dongseung Kim, Sangsig Kim

Affiliation

¹ Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea.

PMID: 21828674
DOI: 10.1088/0957-4484/19/26/265202

Abstract

Electrical characteristics of NOT and NAND logic circuits fabricated using top-gate ZnO nanowire field-effect transistors (FETs) with high-k Al(2)O(3) gate layers were investigated in this study. To form a NOT logic circuit, two identical FETs whose I(on)/I(off) ratios were as high as ∼10(8) were connected in series in a single ZnO nanowire channel, sharing a common source electrode. Its voltage transfer characteristics exhibited an inverting operation and its logic swing was 98%. In addition, the characteristics of a NAND logic circuit composed of three top-gate FETs connected in series in a single nanowire channel are discussed in this paper.