Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling

Konstantin O Petrosyants; Denis S Silkin; Dmitriy A Popov

doi:10.3390/mi13081293

Comparative Characterization of NWFET and FinFET Transistor Structures Using TCAD Modeling

Micromachines (Basel). 2022 Aug 11;13(8):1293. doi: 10.3390/mi13081293.

Authors

Konstantin O Petrosyants^{1

2}, Denis S Silkin¹, Dmitriy A Popov³

Affiliations

¹ School of Electronic Engineering, HSE University, 34 Tallinskaya St., 123458 Moscow, Russia.
² Institute for Design Problems in Microelectronics of Russian Academy of Sciences, 9 Prospekt 60-Letiya Oktyabrya, 117312 Moscow, Russia.
³ School of Computer Engineering, HSE University, 34 Tallinskaya St., 123458 Moscow, Russia.

Abstract

A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried out. The electrical and thermal performances in two device structures were analyzed based on TCAD simulation results. The electro-thermal TCAD models were calibrated to data measured on 30-7 nm FinFETs and NWFETs. The full set of output electrical device parameters I_on, I_off, SS, V_th, and maximal device temperature Tmax was discussed to achieve the optimum VLSI characteristics.

Keywords: TCAD-simulation; electro-thermal effects; fin-shaped transistor FinFET; nanowire NWFET.

Grants and funding

This research received no external funding.