4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

Yanjuan Liu; Dezhen Jia; Junpeng Fang

doi:10.3390/mi14050950

4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance

Micromachines (Basel). 2023 Apr 27;14(5):950. doi: 10.3390/mi14050950.

Authors

Yanjuan Liu¹, Dezhen Jia¹, Junpeng Fang²

Affiliations

¹ College of Electronic and Information Engineering, Shenyang Aerospace University, Shenyang 110136, China.
² School of Integrated Circuits, Tsinghua University, Beijing 100084, China.

Abstract

In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational results have demonstrated that the peak reverse recovery current is reduced by 63.5%, the reverse recovery charge is reduced by 24.5%, and the reverse recovery energy loss is decreased by 25.8%, with extra complexity in the fabrication process.

Keywords: LDMOS; MOS channel diode; reverse recovery.

Abstract

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