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Page 1
Challenges to Optimize Charge Trapping Non-Volatile Flash Memory Cells: A Case Study of HfO2/Al2O3 Nanolaminated Stacks.
Nanomaterials (Basel). 2023 Aug 30;13(17):2456. doi: 10.3390/nano13172456.
Nanomaterials (Basel). 2023.
PMID: 37686963
Free PMC article.
Review.
Magneto-Optical and Muliferroic Properties of Transition-Metal (Fe, Co, or Ni)-Doped ZnO Layers Deposited by ALD.
Paskaleva A, Buchkov K, Galluzzi A, Spassov D, Blagoev B, Ivanov T, Mehandzhiev V, Avramova IA, Terzyiska P, Tzvetkov P, Kovacheva D, Polichetti M.
Paskaleva A, et al. Among authors: spassov d.
ACS Omega. 2022 Nov 14;7(47):43306-43315. doi: 10.1021/acsomega.2c06240. eCollection 2022 Nov 29.
ACS Omega. 2022.
PMID: 36467919
Free PMC article.
Item in Clipboard
Charge Storage and Reliability Characteristics of Nonvolatile Memory Capacitors with HfO2/Al2O3-Based Charge Trapping Layers.
Spassov D, Paskaleva A, Guziewicz E, Wozniak W, Stanchev T, Ivanov T, Wojewoda-Budka J, Janusz-Skuza M.
Spassov D, et al.
Materials (Basel). 2022 Sep 9;15(18):6285. doi: 10.3390/ma15186285.
Materials (Basel). 2022.
PMID: 36143596
Free PMC article.
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Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering.
Simeonov S, Szekeres A, Spassov D, Anastasescu M, Stanculescu I, Nicolescu M, Aperathitis E, Modreanu M, Gartner M.
Simeonov S, et al. Among authors: spassov d.
Nanomaterials (Basel). 2021 Dec 22;12(1):19. doi: 10.3390/nano12010019.
Nanomaterials (Basel). 2021.
PMID: 35009969
Free PMC article.
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Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping.
Paskaleva A, Rommel M, Hutzler A, Spassov D, Bauer AJ.
Paskaleva A, et al. Among authors: spassov d.
ACS Appl Mater Interfaces. 2015 Aug 12;7(31):17032-43. doi: 10.1021/acsami.5b03071. Epub 2015 Jul 30.
ACS Appl Mater Interfaces. 2015.
PMID: 26196163
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Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics.
Spassov D, Paskaleva A, Guziewicz E, Davidović V, Stanković S, Djorić-Veljković S, Ivanov T, Stanchev T, Stojadinović N.
Spassov D, et al.
Materials (Basel). 2021 Feb 10;14(4):849. doi: 10.3390/ma14040849.
Materials (Basel). 2021.
PMID: 33578892
Free PMC article.
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A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress.
Živanović E, Veljković S, Mitrović N, Jovanović I, Djorić-Veljković S, Paskaleva A, Spassov D, Danković D.
Živanović E, et al. Among authors: spassov d.
Micromachines (Basel). 2024 Apr 5;15(4):503. doi: 10.3390/mi15040503.
Micromachines (Basel). 2024.
PMID: 38675313
Free PMC article.
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