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Year | Number of Results |
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2014 | 2 |
2015 | 1 |
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Page 1
Quantum Treatment of Inelastic Interactions for the Modeling of Nanowire Field-Effect Transistors.
Materials (Basel). 2019 Dec 21;13(1):60. doi: 10.3390/ma13010060.
Materials (Basel). 2019.
PMID: 31877686
Free PMC article.
Review.
Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD.
Wang Z, Tripathi M, Golsanamlou Z, Kumari P, Lovarelli G, Mazziotti F, Logoteta D, Fiori G, Sementa L, Marega GM, Ji HG, Zhao Y, Radenovic A, Iannaccone G, Fortunelli A, Kis A.
Wang Z, et al. Among authors: logoteta d.
Adv Mater. 2023 Apr;35(14):e2209371. doi: 10.1002/adma.202209371. Epub 2023 Feb 28.
Adv Mater. 2023.
PMID: 36644893
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Vertical transport in graphene-hexagonal boron nitride heterostructure devices.
Bruzzone S, Logoteta D, Fiori G, Iannaccone G.
Bruzzone S, et al. Among authors: logoteta d.
Sci Rep. 2015 Sep 29;5:14519. doi: 10.1038/srep14519.
Sci Rep. 2015.
PMID: 26415656
Free PMC article.
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Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices.
Logoteta D, Fiori G, Iannaccone G.
Logoteta D, et al.
Sci Rep. 2014 Oct 20;4:6607. doi: 10.1038/srep06607.
Sci Rep. 2014.
PMID: 25328156
Free PMC article.
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High-performance solution of the transport problem in a graphene armchair structure with a generic potential.
Logoteta D, Marconcini P, Bonati C, Fagotti M, Macucci M.
Logoteta D, et al.
Phys Rev E Stat Nonlin Soft Matter Phys. 2014 Jun;89(6):063309. doi: 10.1103/PhysRevE.89.063309. Epub 2014 Jun 27.
Phys Rev E Stat Nonlin Soft Matter Phys. 2014.
PMID: 25019914
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