Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Jianfei Li; Duo Chen; Kuilong Li; Qiang Wang; Mengyao Shi; Dejie Diao; Chen Cheng; Changfu Li; Jiancai Leng

doi:10.3390/nano11113134

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer

Nanomaterials (Basel). 2021 Nov 20;11(11):3134. doi: 10.3390/nano11113134.

Authors

Jianfei Li¹, Duo Chen², Kuilong Li¹, Qiang Wang¹, Mengyao Shi¹, Dejie Diao¹, Chen Cheng³, Changfu Li⁴, Jiancai Leng¹

Affiliations

¹ Department of Physics, School of Electronic and Information Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan 250353, China.
² International School for Optoelectronic Engineering, Qilu University of Technology (Shandong Academy of Science), Jinan 250353, China.
³ College of Physics and Electronics, Shandong Normal University, Jinan 250014, China.
⁴ School of Physics and Electronic Engineering, Taishan University, Taian 271000, China.

Abstract

GaN-based green light-emitting diodes (LEDs) with different thicknesses of the low-temperature (LT) p-GaN layer between the last GaN barriers and p-AlGaN electron blocking layer were characterized by photoluminescence (PL) and electroluminescence (EL) spectroscopic methods in the temperature range of 6-300 K and injection current range of 0.01-350 mA. Based on the results, we suggest that a 20 nm-thick LT p-GaN layer can effectively prevent indium (In) re-evaporation, improve the quantum-confined Stark effect in the last quantum well (QW) of the active region, and finally reduce the efficiency droop by about 7%.

Keywords: InGaN/GaN multiple quantum well; electroluminescence; localization effect; low-temperature p-GaN layer; photoluminescence.

Abstract

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