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2006 2
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2014 1
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Page 1
Thermodynamic stability of high phosphorus concentration in silicon nanostructures.
Perego M, Seguini G, Arduca E, Frascaroli J, De Salvador D, Mastromatteo M, Carnera A, Nicotra G, Scuderi M, Spinella C, Impellizzeri G, Lenardi C, Napolitani E. Perego M, et al. Among authors: de salvador d. Nanoscale. 2015 Sep 14;7(34):14469-75. doi: 10.1039/c5nr02584b. Nanoscale. 2015. PMID: 26257012 Free article.
Apparatus to study crystal channeling and volume reflection phenomena at the SPS H8 beamline.
Scandale W, Efthymiopoulos I, Still DA, Carnera A, Della Mea G, De Salvador D, Milan R, Vomiero A, Baricordi S, Chiozzi S, Dalpiaz P, Damiani C, Fiorini M, Guidi V, Martinelli G, Mazzolari A, Milan E, Ambrosi G, Azzarello P, Battiston R, Bertucci B, Burger WJ, Ionica M, Zuccon P, Cavoto G, Santacesaria R, Valente P, Vallazza E, Afonin AG, Baranov VT, Chesnokov YA, Kotov VI, Maisheev VA, Yazynin IA, Afanasiev SV, Kovalenko AD, Taratin AM, Bondar NF, Denisov AS, Gavrikov YA, Ivanov YM, Ivochkin VG, Kosyanenko SV, Lapina LP, Levtchenko PM, Petrunin AA, Skorobogatov VV, Suvorov VM, Bolognini D, Foggetta L, Hasan S, Prest M. Scandale W, et al. Among authors: de salvador d. Rev Sci Instrum. 2008 Feb;79(2 Pt 1):023303. doi: 10.1063/1.2832638. Rev Sci Instrum. 2008. PMID: 18315289 Free article.
Synthesis and characterization of P δ-layer in SiO2 by monolayer doping.
Arduca E, Mastromatteo M, De Salvador D, Seguini G, Lenardi C, Napolitani E, Perego M. Arduca E, et al. Among authors: de salvador d. Nanotechnology. 2016 Feb 19;27(7):075606. doi: 10.1088/0957-4484/27/7/075606. Epub 2016 Jan 20. Nanotechnology. 2016. PMID: 26789694
Mechanism of boron diffusion in amorphous silicon.
Mirabella S, De Salvador D, Bruno E, Napolitani E, Pecora EF, Boninelli S, Priolo F. Mirabella S, et al. Among authors: de salvador d. Phys Rev Lett. 2008 Apr 18;100(15):155901. doi: 10.1103/PhysRevLett.100.155901. Epub 2008 Apr 15. Phys Rev Lett. 2008. PMID: 18518128
High-efficiency volume reflection of an ultrarelativistic proton beam with a bent silicon crystal.
Scandale W, Still DA, Carnera A, Della Mea G, De Salvador D, Milan R, Vomiero A, Baricordi S, Dalpiaz P, Fiorini M, Guidi V, Martinelli G, Mazzolari A, Milan E, Ambrosi G, Azzarello P, Battiston R, Bertucci B, Burger WJ, Ionica M, Zuccon P, Cavoto G, Santacesaria R, Valente P, Vallazza E, Afonin AG, Baranov VT, Chesnokov YA, Kotov VI, Maisheev VA, Yaznin IA, Afansiev SV, Kovalenko AD, Taratin AM, Denisov AS, Gavrikov YA, Ivanov YM, Ivochkin VG, Kosyanenko SV, Petrunin AA, Skorobogatov VV, Suvorov VM, Bolognini D, Foggetta L, Hasan S, Prest M. Scandale W, et al. Among authors: de salvador d. Phys Rev Lett. 2007 Apr 13;98(15):154801. doi: 10.1103/PhysRevLett.98.154801. Epub 2007 Apr 9. Phys Rev Lett. 2007. PMID: 17501358 Free article.
Atomistic mechanism of boron diffusion in silicon.
De Salvador D, Napolitani E, Mirabella S, Bisognin G, Impellizzeri G, Carnera A, Priolo F. De Salvador D, et al. Phys Rev Lett. 2006 Dec 22;97(25):255902. doi: 10.1103/PhysRevLett.97.255902. Epub 2006 Dec 20. Phys Rev Lett. 2006. PMID: 17280368
Effect of strain on the carrier mobility in heavily doped p-type Si.
Romano L, Piro AM, Grimaldi MG, Bisognin G, Napolitani E, De Salvador D. Romano L, et al. Among authors: de salvador d. Phys Rev Lett. 2006 Sep 29;97(13):136605. doi: 10.1103/PhysRevLett.97.136605. Epub 2006 Sep 28. Phys Rev Lett. 2006. PMID: 17026061