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Enhancement of InN Luminescence by Introduction of Graphene Interlayer.
Nanomaterials (Basel). 2019 Mar 12;9(3):417. doi: 10.3390/nano9030417.
Nanomaterials (Basel). 2019.
PMID: 30871011
Free PMC article.
Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage.
Svrcek V, Kolenda M, Kadys A, Reklaitis I, Dobrovolskas D, Malinauskas T, Lozach M, Mariotti D, Strassburg M, Tomašiūnas R.
Svrcek V, et al. Among authors: dobrovolskas d.
Nanomaterials (Basel). 2018 Dec 12;8(12):1039. doi: 10.3390/nano8121039.
Nanomaterials (Basel). 2018.
PMID: 30545138
Free PMC article.
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