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Page 1
New Approaches and Understandings in the Growth of Cubic Silicon Carbide.
Materials (Basel). 2021 Sep 16;14(18):5348. doi: 10.3390/ma14185348.
Materials (Basel). 2021.
PMID: 34576572
Free PMC article.
Review.
Impact of Nitrogen on the Selective Closure of Stacking Faults in 3C-SiC.
Calabretta C, Scuderi V, Bongiorno C, Cannizzaro A, Anzalone R, Calcagno L, Mauceri M, Crippa D, Boninelli S, La Via F.
Calabretta C, et al. Among authors: crippa d.
Cryst Growth Des. 2022 Aug 3;22(8):4996-5003. doi: 10.1021/acs.cgd.2c00515. Epub 2022 Jun 29.
Cryst Growth Des. 2022.
PMID: 35942119
Free PMC article.
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Growth and Coalescence of 3C-SiC on Si(111) Micro-Pillars by a Phase-Field Approach.
Masullo M, Bergamaschini R, Albani M, Kreiliger T, Mauceri M, Crippa D, La Via F, Montalenti F, von Känel H, Miglio L.
Masullo M, et al. Among authors: crippa d.
Materials (Basel). 2019 Oct 1;12(19):3223. doi: 10.3390/ma12193223.
Materials (Basel). 2019.
PMID: 31581499
Free PMC article.
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Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100).
Calabretta C, Scuderi V, Anzalone R, Mauceri M, Crippa D, Cannizzaro A, Boninelli S, La Via F.
Calabretta C, et al. Among authors: crippa d.
Materials (Basel). 2021 Aug 6;14(16):4400. doi: 10.3390/ma14164400.
Materials (Basel). 2021.
PMID: 34442923
Free PMC article.
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