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chun tae gyu
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Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes.
Opt Express. 2014 May 5;22 Suppl 3:A663-70. doi: 10.1364/OE.22.00A663.
Opt Express. 2014.
PMID: 24922374
Free article.
Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN.
Yu CT, Lai WC, Yen CH, Hsu HC, Chang SJ.
Yu CT, et al.
Opt Express. 2014 May 5;22 Suppl 3:A633-41. doi: 10.1364/OE.22.00A633.
Opt Express. 2014.
PMID: 24922371
Free article.
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