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Page 1
Influence of NF3 Plasma-Treated HfO2 Gate Insulator Surface on Tin Oxide Thin-Film Transistors.
Materials (Basel). 2023 Nov 15;16(22):7172. doi: 10.3390/ma16227172.
Materials (Basel). 2023.
PMID: 38005100
Free PMC article.
Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors.
Avis C, Kim Y, Jang J.
Avis C, et al.
Materials (Basel). 2019 Oct 14;12(20):3341. doi: 10.3390/ma12203341.
Materials (Basel). 2019.
PMID: 31614961
Free PMC article.
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Effect of channel layer thickness on the performance of indium-zinc-tin oxide thin film transistors manufactured by inkjet printing.
Avis C, Hwang HR, Jang J.
Avis C, et al.
ACS Appl Mater Interfaces. 2014 Jul 23;6(14):10941-5. doi: 10.1021/am501153w. Epub 2014 Jun 30.
ACS Appl Mater Interfaces. 2014.
PMID: 24877653
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Understanding the Origin of the Hysteresis of High-Performance Solution Processed Polycrystalline SnO2 Thin-Film Transistors and Applications to Circuits.
Avis C, Jang J.
Avis C, et al.
Membranes (Basel). 2021 Dec 22;12(1):7. doi: 10.3390/membranes12010007.
Membranes (Basel). 2021.
PMID: 35054533
Free PMC article.
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