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n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.
Nanoscale Res Lett. 2011 Dec;6(1):65. doi: 10.1007/s11671-010-9815-7. Epub 2010 Oct 7.
Nanoscale Res Lett. 2011.
PMID: 27502686
Free PMC article.
Far-field imaging for direct visualization of light interferences in GaAs nanowires.
Grange R, Brönstrup G, Kiometzis M, Sergeyev A, Richter J, Leiterer C, Fritzsche W, Gutsche C, Lysov A, Prost W, Tegude FJ, Pertsch T, Tünnermann A, Christiansen S.
Grange R, et al. Among authors: gutsche c.
Nano Lett. 2012 Oct 10;12(10):5412-7. doi: 10.1021/nl302896n. Epub 2012 Sep 21.
Nano Lett. 2012.
PMID: 22985124
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Direct determination of minority carrier diffusion lengths at axial GaAs nanowire p-n junctions.
Gutsche C, Niepelt R, Gnauck M, Lysov A, Prost W, Ronning C, Tegude FJ.
Gutsche C, et al.
Nano Lett. 2012 Mar 14;12(3):1453-8. doi: 10.1021/nl204126n. Epub 2012 Feb 29.
Nano Lett. 2012.
PMID: 22364406
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Alignment of semiconductor nanowires using ion beams.
Borschel C, Niepelt R, Geburt S, Gutsche C, Regolin I, Prost W, Tegude FJ, Stichtenoth D, Schwen D, Ronning C.
Borschel C, et al. Among authors: gutsche c.
Small. 2009 Nov;5(22):2576-80. doi: 10.1002/smll.200900562.
Small. 2009.
PMID: 19714732
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