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chong jh sun
(1 results)?
Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET).
Nanomaterials (Basel). 2022 Oct 21;12(20):3712. doi: 10.3390/nano12203712.
Nanomaterials (Basel). 2022.
PMID: 36296902
Free PMC article.
Trench FinFET Nanostructure with Advanced Ferroelectric Nanomaterial HfZrO2 for Sub-60-mV/Decade Subthreshold Slope for Low Power Application.
Yan SC, Wu CH, Sun CJ, Lin YW, Yao YJ, Wu YC.
Yan SC, et al. Among authors: sun cj.
Nanomaterials (Basel). 2022 Jun 23;12(13):2165. doi: 10.3390/nano12132165.
Nanomaterials (Basel). 2022.
PMID: 35807999
Free PMC article.
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