Photothermoelectric Effects in Nanoporous Silicon

Yu-Sheng Lai; Chao-Yang Tsai; Chin-Kai Chang; Cheng-Yin Huang; Vincent K S Hsiao; Yuhlong Oliver Su

doi:10.1002/adma.201504990

Photothermoelectric Effects in Nanoporous Silicon

Adv Mater. 2016 Apr 6;28(13):2644-8. doi: 10.1002/adma.201504990. Epub 2016 Jan 28.

Authors

Yu-Sheng Lai¹, Chao-Yang Tsai², Chin-Kai Chang², Cheng-Yin Huang², Vincent K S Hsiao², Yuhlong Oliver Su³

Affiliations

¹ National Nano Device Laboratories, National Applied Research Laboratories, 26, Prosperity Road I, Hsinchu, 30078, Taiwan.
² Department of Applied Materials and Optoelectronic Engineering, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.
³ Department of Applied Chemistry, National Chi Nan University, No. 1, University Road, Puli, NanTou, 54561, Taiwan.

PMID: 26821828
DOI: 10.1002/adma.201504990

Abstract

The first observation of the photothermoelectric effect in a nanoporous silicon (NPSi) device indicates that the photocurrent is dependent on the position of light-induced local heating from illumination at the Au-electrode/NPSi interface.

Keywords: nanoporous silicon; photothermoelectric effects; thermoelectric effects.