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Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors.
Materials (Basel). 2022 Oct 25;15(21):7475. doi: 10.3390/ma15217475.
Materials (Basel). 2022.
PMID: 36363066
Free PMC article.
Normally-off β-Ga2O3 MOSFET with an Epitaxial Drift Layer.
Jang CH, Atmaca G, Cha HY.
Jang CH, et al.
Micromachines (Basel). 2022 Jul 27;13(8):1185. doi: 10.3390/mi13081185.
Micromachines (Basel). 2022.
PMID: 36014107
Free PMC article.
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Temperature- and Frequency-Dependent Ferroelectric Characteristics of Metal-Ferroelectric-Metal Capacitors with Atomic-Layer-Deposited Undoped HfO2 Films.
Jang CH, Kim HS, Kim H, Cha HY.
Jang CH, et al.
Materials (Basel). 2022 Mar 12;15(6):2097. doi: 10.3390/ma15062097.
Materials (Basel). 2022.
PMID: 35329549
Free PMC article.
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