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2010 | 1 |
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Page 1
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy.
Nanomaterials (Basel). 2022 Apr 13;12(8):1340. doi: 10.3390/nano12081340.
Nanomaterials (Basel). 2022.
PMID: 35458046
Free PMC article.
Interface Formation during the Growth of Phase Change Material Heterostructures Based on Ge-Rich Ge-Sb-Te Alloys.
Chèze C, Righi Riva F, Di Bella G, Placidi E, Prili S, Bertelli M, Diaz Fattorini A, Longo M, Calarco R, Bernasconi M, Abou El Kheir O, Arciprete F.
Chèze C, et al.
Nanomaterials (Basel). 2022 Mar 18;12(6):1007. doi: 10.3390/nano12061007.
Nanomaterials (Basel). 2022.
PMID: 35335820
Free PMC article.
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Silicon-nanowire transistors with intruded nickel-silicide contacts.
Weber WM, Geelhaar L, Graham AP, Unger E, Duesberg GS, Liebau M, Pamler W, Chèze C, Riechert H, Lugli P, Kreupl F.
Weber WM, et al. Among authors: cheze c.
Nano Lett. 2006 Dec;6(12):2660-6. doi: 10.1021/nl0613858.
Nano Lett. 2006.
PMID: 17163684
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Collector phase transitions during vapor-solid-solid nucleation of GaN nanowires.
Chèze C, Geelhaar L, Trampert A, Brandt O, Riechert H.
Chèze C, et al.
Nano Lett. 2010 Sep 8;10(9):3426-31. doi: 10.1021/nl101465b.
Nano Lett. 2010.
PMID: 20715843
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