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Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study.
Micromachines (Basel). 2022 Nov 11;13(11):1957. doi: 10.3390/mi13111957.
Micromachines (Basel). 2022.
PMID: 36422387
Free PMC article.
Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study.
Choi JH, Kang WS, Kim D, Kim JH, Lee JH, Kim KY, Min BG, Kang DM, Kim HS.
Choi JH, et al. Among authors: min bg.
Micromachines (Basel). 2023 May 23;14(6):1101. doi: 10.3390/mi14061101.
Micromachines (Basel). 2023.
PMID: 37374686
Free PMC article.
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Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study.
Kang WS, Choi JH, Kim D, Kim JH, Lee JH, Min BG, Kang DM, Choi JH, Kim HS.
Kang WS, et al. Among authors: min bg.
Micromachines (Basel). 2023 Dec 27;15(1):57. doi: 10.3390/mi15010057.
Micromachines (Basel). 2023.
PMID: 38258177
Free PMC article.
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