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Page 1
Highly Reliable Memory Operation of High-Density Three-Terminal Thyristor Random Access Memory.
Nanoscale Res Lett. 2022 Feb 23;17(1):28. doi: 10.1186/s11671-022-03667-7.
Nanoscale Res Lett. 2022.
PMID: 35195806
Free PMC article.
mm-band surface acoustic wave devices utilizing two-dimensional boron nitride.
Yoon SH, Baek CK, Kong BD.
Yoon SH, et al. Among authors: kong bd.
Sci Rep. 2022 Nov 29;12(1):20578. doi: 10.1038/s41598-022-24852-9.
Sci Rep. 2022.
PMID: 36446863
Free PMC article.
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Effect of Quasi-One-Dimensional Properties on Source/Drain Contacts in Vertical Nanowire Field-Effect Transistors (VNWFETs).
Park I, Choi J, Kim J, Kong BD, Lee JS.
Park I, et al. Among authors: kong bd.
Micromachines (Basel). 2024 Mar 30;15(4):481. doi: 10.3390/mi15040481.
Micromachines (Basel). 2024.
PMID: 38675292
Free PMC article.
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