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The Diffusion Mechanism of Ge During Oxidation of Si/SiGe Nanofins.
ACS Appl Mater Interfaces. 2022 Jun 29;14(25):29422-29430. doi: 10.1021/acsami.2c05470. Epub 2022 Jun 15.
ACS Appl Mater Interfaces. 2022.
PMID: 35706336
Comment on "Theory of defect levels and the 'band gap problem' in silicon".
Tuttle BR, Pantelides ST.
Tuttle BR, et al.
Phys Rev Lett. 2008 Aug 22;101(8):089701; author reply 089702. doi: 10.1103/PhysRevLett.101.089701. Epub 2008 Aug 21.
Phys Rev Lett. 2008.
PMID: 18764665
No abstract available.
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Computational Predictions for Single Chain Chalcogenide-Based One-Dimensional Materials.
Tuttle B, Alhassan S, Pantelides S.
Tuttle B, et al.
Nanomaterials (Basel). 2017 May 17;7(5):115. doi: 10.3390/nano7050115.
Nanomaterials (Basel). 2017.
PMID: 28513537
Free PMC article.
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