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Year | Number of Results |
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2011 | 1 |
2012 | 2 |
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Page 1
Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum Dots.
Nanomaterials (Basel). 2023 Apr 26;13(9):1475. doi: 10.3390/nano13091475.
Nanomaterials (Basel). 2023.
PMID: 37177020
Free PMC article.
Atomically controlled processing in silicon-based CVD epitaxial growth.
Murota J, Sakuraba M, Tillack B.
Murota J, et al. Among authors: tillack b.
J Nanosci Nanotechnol. 2011 Sep;11(9):8348-53. doi: 10.1166/jnn.2011.5052.
J Nanosci Nanotechnol. 2011.
PMID: 22097582
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A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVD.
Yamamoto Y, Zaumseil P, Capellini G, Andreas Schubert M, Hesse A, Albani M, Bergamaschini R, Montalenti F, Schroeder T, Tillack B.
Yamamoto Y, et al. Among authors: tillack b.
Nanotechnology. 2017 Dec 1;28(48):485303. doi: 10.1088/1361-6528/aa91c1.
Nanotechnology. 2017.
PMID: 28985186
Free article.
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Continuously tunable delay line based on SOI tapered Bragg gratings.
Giuntoni I, Stolarek D, Kroushkov DI, Bruns J, Zimmermann L, Tillack B, Petermann K.
Giuntoni I, et al. Among authors: tillack b.
Opt Express. 2012 May 7;20(10):11241-6. doi: 10.1364/OE.20.011241.
Opt Express. 2012.
PMID: 22565746
Free article.
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Matching p-i-n-junctions and optical modes enables fast and ultra-small silicon modulators.
Meister S, Rhee H, Al-Saadi A, Franke BA, Kupijai S, Theiss C, Zimmermann L, Tillack B, Richter HH, Tian H, Stolarek D, Schneider T, Woggon U, Eichler HJ.
Meister S, et al. Among authors: tillack b.
Opt Express. 2013 Jul 1;21(13):16210-21. doi: 10.1364/OE.21.016210.
Opt Express. 2013.
PMID: 23842406
Free article.
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Phase regeneration of DPSK signals in a silicon waveguide with reverse-biased p-i-n junction.
Da Ros F, Vukovic D, Gajda A, Dalgaard K, Zimmermann L, Tillack B, Galili M, Petermann K, Peucheret C.
Da Ros F, et al. Among authors: tillack b.
Opt Express. 2014 Mar 10;22(5):5029-36. doi: 10.1364/OE.22.005029.
Opt Express. 2014.
PMID: 24663841
Free article.
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Highly efficient CW parametric conversion at 1550 nm in SOI waveguides by reverse biased p-i-n junction.
Gajda A, Zimmermann L, Jazayerifar M, Winzer G, Tian H, Elschner R, Richter T, Schubert C, Tillack B, Petermann K.
Gajda A, et al. Among authors: tillack b.
Opt Express. 2012 Jun 4;20(12):13100-7. doi: 10.1364/OE.20.013100.
Opt Express. 2012.
PMID: 22714337
Free article.
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