Electrochemical deposition into a prepared SiO2/Si-p ion track template was used to make orthorhombic SnO2 vertical nanowires (NWs) for this study. As a result, a SnO2-NWs/SiO2/Si nanoheterostructure with an orthorhombic crystal structure of SnO2 nanowires was obtained. Photoluminescence excited by light with a wavelength of 240 nm has a low intensity, arising mainly due to defects such as oxygen vacancies and interstitial tin or tin with damaged bonds. The current-voltage characteristic measurement showed that the SnO2-NWs/SiO2/Si nanoheterostructure made this way has many p-n junctions.
Keywords: SiO2/Si track template; electrochemical deposition; hybrid DFT calculations; nanowires; oxide semiconductors; track technologies.